Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source.

Abstract We report an ultraviolet (UV) electroluminescence (EL) in n-SnO 2 /p-ZnO heterojunction light-emitting diodes with the nanostructural SnO 2 as an n-type layer and the Li-doped ZnO (ZnO:Li) synthesized by high-temperature high-pressure (HTHP) method as a high hole concentration p-type layer. Two kinds of SnO 2 nanostructures including nanobelts (NBs) and nanowires (NWs) were used to fabricate n-type layers in the heterojunctions. The two heterojunctions with different SnO 2 nanostructures demonstrate different light-emission feature in EL measurements. The SnO 2 NBs/p-ZnO heterojunction shows a blue emission band centered at 416 nm under forward-bias voltage. A strong UV emission peak located at 391 nm was observed for the SnO 2 NWs/p-ZnO heterojunction. Photoluminescence (PL) spectra indicate that the difference in EL is attributed to morphology-dependent light-emission feature in nanostructural SnO 2 layer. Our results suggest that the nanostructural SnO 2 /ZnO:Li heterojunction is a potential and promising system in the UV optoelectronic field. [ABSTRACT FROM AUTHOR]