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Optical properties of ZnSxTe1-x synthesized by sulfur implantation.
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Mar2019, Vol. 442, p24-27. 4p. - Publication Year :
- 2019
-
Abstract
- Abstract ZnS x Te 1-x thin films were prepared by sulfur implantation into ZnTe grown by molecular beam epitaxy and subsequent pulsed laser melting. The chemical composition and layer thickness of the ZnS x Te 1-x layer have been analyzed based on Rutherford backscattering spectrometry. Raman and photoluminescence spectroscopies were employed to reveal the optical properties of the ZnS x Te 1-x layer. Raman spectra exhibit a redshift of the longitudinal optical photon modes with increasing sulfur concentration. The room temperature photoluminescence measurement indicates the appearance of the sulfur induced energy state in the bandgap. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*SULFUR
*PHOTONS
*SOLID state electronics
*CHALCOGENS
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 442
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 134379079
- Full Text :
- https://doi.org/10.1016/j.nimb.2018.12.002