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High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC.
- Source :
-
IEEE Transactions on Electromagnetic Compatibility . Apr2019, Vol. 61 Issue 2, p564-571. 8p. - Publication Year :
- 2019
-
Abstract
- Rapid increase in operating frequencies and power density necessitate the importance of examining electromagnetic compatibility/electromagnetic emissions (EMEs) from high-frequency and high-power integrated circuits (ICs). In this paper, a simulation method is demonstrated to study the EME using gallium nitride high electron mobility transistor power amplifier IC chip as a device under test. Simulation model is developed by collaborating a high-frequency structure simulator with a Keysight Advance Design System for simulation of three-dimensional layout of IC. The simulated EME results are verified with experimental measurement results; the hotspots obtained with higher EME as identified by a near-field scanner and simulation results are identical. With this simulation method, optimization is done using a response surface methodology to reduce the EME for the IC chip. It is found that small changes in the IC layout can make a significant difference in the EME. Simulation model developed with RSM optimization technique opens a gateway for the IC industry to investigate EME of their chip design without going through a costly and time-consuming process of fabrication for testing its EME. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189375
- Volume :
- 61
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electromagnetic Compatibility
- Publication Type :
- Academic Journal
- Accession number :
- 134407055
- Full Text :
- https://doi.org/10.1109/TEMC.2018.2820202