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Synthesis and characterization of carbon-poor SiC nanowires via vapor-liquid-solid growth mechanism.
- Source :
-
Ceramics International . Apr2019, Vol. 45 Issue 5, p6440-6446. 7p. - Publication Year :
- 2019
-
Abstract
- Abstract Nanowires growth via vapor-liquid-solid mechanism leads to high-quality SiC nanowires. C content is key issue affecting the morphology and composition of SiC nanowires. Here, we report the synthesis and growth mechanism of 3C-SiC nanowires containing reduced amount of C, which are grown on single-crystal Si via pyrolysis of polycarbosilane (PCS) by adjusting pyrolysis temperature and precursor. SiC nanowires have a diameter of 50 nm, while their thickness is 43.75 µm. High-temperature stability of precursors with multiple side-chain groups has an impact on the reaction rate, in result the solid precursor state and pyrolysis temperature at 1350 °C are beneficial to the formation of pure carbon-poor SiC nanowires. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 45
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 134424010
- Full Text :
- https://doi.org/10.1016/j.ceramint.2018.12.131