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Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices.
- Source :
-
Applied Physics Letters . 1/28/2019, Vol. 114 Issue 4, pN.PAG-N.PAG. 5p. 1 Diagram, 5 Graphs. - Publication Year :
- 2019
-
Abstract
- This letter studies the effect of the thickness of the top electrode on the performance of a SiNx resistive switching layer. We fabricated six devices with Ta electrodes of different thickness values (8 nm, 10 nm, 15 nm, 30 nm, 40 nm, and 50 nm) in a Ta/SiNx/Pt structure and then systematically investigated their performance. The high electrode thickness devices show stable and self-compliant bipolar resistive switching characteristics. In contrast, low electrode thickness devices display unstable RS behavior and have a high set voltage. In the low resistance state region, the Ta/SiNx/Pt devices obey Ohmic conduction, while in the high resistance state region, the conduction mechanism is Schottky emission. To explain the different RS behavior in the two device types, a nitrogen-ion-based model has been presented. According to this model, the device with a thicker top electrode has a stronger nitrogen accommodation ability, while the migration of nitrogen ions and silicon dangling bonds dominates conductive behavior. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 114
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 134449519
- Full Text :
- https://doi.org/10.1063/1.5062597