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Analysis of millimeter-wave GaN IMPATT oscillator at elevated temperature.
- Source :
-
Microwave & Optical Technology Letters . 11/20/99, Vol. 23 Issue 4, p257-259. 3p. 1 Chart, 5 Graphs. - Publication Year :
- 1999
-
Abstract
- GaN is a suitable material for millimeter-wave high-power IMPATT oscillators because of its superior electronic properties—high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read-type large-signal model. The power density of GaN IMPATT devices at millimeter-wave frequencies is two orders magnitude higher than that of conventional GaAs and Si IMPATT devices. The simulations showed that GaN wurtzite phase p+-n single-drift flat-profile IMPATT oscillators at 300 GHz have an efficiency of 11% and an RF power density of 1.6 MW/cm2 when operated at 800 K. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 257–259, 1999. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08952477
- Volume :
- 23
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Microwave & Optical Technology Letters
- Publication Type :
- Academic Journal
- Accession number :
- 13449144
- Full Text :
- https://doi.org/10.1002/(SICI)1098-2760(19991120)23:4<257::AID-MOP20>3.0.CO;2-9