Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications.

A fringing field-effect-dependent MOSFET equivalent-circuit model for its microwave frequency applications has been developed. The thermal noise performance of the device has also been analyzed, including the distributed gate. The equivalent-current noise source takes into account the thermal noise generated by the resistive and inductive gate, and the results so obtained are compared with experimental/simulated data, and are in close agreement. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 97–105, 2001. [ABSTRACT FROM AUTHOR]