A Numerical Simulation of C3N Nanoribbon-Based Field-Effect Transistors.

MLA

Zhang, Tiancheng, et al. “A Numerical Simulation of C3N Nanoribbon-Based Field-Effect Transistors.” IEEE Transactions on Electron Devices, vol. 66, no. 2, Feb. 2019, pp. 1087–91. EBSCOhost, https://doi.org/10.1109/TED.2018.2883298.

APA

Zhang, T., Zeng, H., Ding, D., & Chen, R. S. (2019). A Numerical Simulation of C3N Nanoribbon-Based Field-Effect Transistors. IEEE Transactions on Electron Devices, 66(2), 1087–1091. https://doi.org/10.1109/TED.2018.2883298

Chicago

Zhang, Tiancheng, Hui Zeng, Dazhi Ding, and R. S. Chen. 2019. “A Numerical Simulation of C3N Nanoribbon-Based Field-Effect Transistors.” IEEE Transactions on Electron Devices 66 (2): 1087–91. doi:10.1109/TED.2018.2883298.