Cite
Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain.
MLA
Wu, Wangran, et al. “Comprehensive Investigation on Electrical Properties of NLDMOS and PLDMOS Under Mechanical Strain.” IEEE Transactions on Electron Devices, vol. 66, no. 2, Feb. 2019, pp. 1012–17. EBSCOhost, https://doi.org/10.1109/TED.2018.2884031.
APA
Wu, W., Wang, Y., Yang, G., Liu, S., Zhu, J., & Sun, W. (2019). Comprehensive Investigation on Electrical Properties of nLDMOS and pLDMOS Under Mechanical Strain. IEEE Transactions on Electron Devices, 66(2), 1012–1017. https://doi.org/10.1109/TED.2018.2884031
Chicago
Wu, Wangran, Yaohui Wang, Guangan Yang, Siyang Liu, Jing Zhu, and Weifeng Sun. 2019. “Comprehensive Investigation on Electrical Properties of NLDMOS and PLDMOS Under Mechanical Strain.” IEEE Transactions on Electron Devices 66 (2): 1012–17. doi:10.1109/TED.2018.2884031.