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Turn-OFF Transient Analysis of Superjunction IGBT.
- Source :
-
IEEE Transactions on Electron Devices . Feb2019, Vol. 66 Issue 2, p991-998. 8p. - Publication Year :
- 2019
-
Abstract
- A turn-OFF transient analysis of the superjunction (SJ) insulated-gate bipolar transistor (IGBT) based on an analytical model as a function of structural parameters is presented in this paper. The physical phenomenon dependent on the doping density of the n-/p-pillar of the SJ IGBT could be explained using the analytical model to predict the static and transient characteristics. From this model, tradeoff between turn-OFF loss and ON-state voltage has been obtained, as verified by the TCAD simulations with a good agreement. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 134552114
- Full Text :
- https://doi.org/10.1109/TED.2018.2884020