A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics.

In this paper, a novel insulated gate triggered thyristor with the Schottky barrier (SB-IGTT) is proposed for improved the repetitive pulse life and high-di/dt characteristics. Different from the conventional cathode shorted MOS-controlled thyristor (CS-MCT), an SB is specially imbedded to enlarge the effective turn-on area and enhance the electron–hole plasma spread during short duration pulse, which contributes significantly to relaxing the thermal concentration and improving the repetitive pulse life as well as achieves superior di/dt characteristics. The experimental results show that the proposed SB-IGTT continuously undergoes more than 220 000 shots at the pulse frequency of 5 Hz, yielding a $10\times $ longer repetitive pulse life than the conventional CS-MCT. Simultaneously, SB-IGTT performs a di/dt up to 120 kA/ $\mu \text{s}$ with peak current near 10 kA, increasing di/dt by about 20%. Improved repetitive pulse life and simultaneous superior di/dt characteristics indicate that the proposed SB-IGTT is suitable for repetitive pulse power applications. [ABSTRACT FROM AUTHOR]