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Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices.
- Source :
-
Applied Physics Letters . 2/4/2019, Vol. 114 Issue 5, pN.PAG-N.PAG. 5p. 1 Diagram, 2 Graphs. - Publication Year :
- 2019
-
Abstract
- A nonvolatile memory structure with a high-k composite of ZnO-TiO2 as a charge-trapping dielectric was fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potential of the conduction-band minimum of the composite was designed to be lower than that of Si by the use of the special energy-band offsets among Si, ZnO, and TiO2. Compared to the conduction-band minimum of Si, a relatively negative potential of the high-k composite leads to a continuous rise in the shift of the flat-band potential of the memory device except a drop at the beginning part of the time-dependent retention curve after a programming operation. The drop was attributed to the escape of trapped charges at the Si/Al2O3 interface. After extracting the contribution to the deterioration of the retention curve from the traps at the Si/Al2O3 interface, it was identified that the band alignment in a charge-trapping memory device dominated its retention behaviors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 114
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 134618246
- Full Text :
- https://doi.org/10.1063/1.5063625