Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors.

Abstract The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a triangular fin channel was observed, arising from suppression of the variation in the conduction threshold voltage with increasing doping concentration, compared to JLTs with rectangular fin channels. The potential distribution in the channel cross-section shows a less varied potential at the bottom of a triangular channel than at the bottom of a rectangular channel, and supports the result that triangular channels are less sensitive to variations in channel doping concentration. Graphical abstract Unlabelled Image Highlights • The performance of junctionless transistors (JLT) was investigated with fin shapes. • The impact of fin shapes was studied with numerical simulations. • V th variation with doping concentration N d is suppressed in triangular channels. • Heavily doped JLTs are more vulnerable with change of fin shapes. • Stronger gate coupling in triangular fin is observed with potential distributions. [ABSTRACT FROM AUTHOR]