Impact of blocking temperature distribution on the thermal behavior of MnIr and MnPt magnetoresistive stacks.

Highlights • Thermal stability of H ex for MnPt and MnIr was studied in AF/FM bilayers and TMR stacks. • A model was developed to describe the H ex and H c behaviors at high temperatures. • A better thermal stability was observed in TMR stacks than bilayers. Abstract Ensuring a reliable reference in magnetoresistive devices requires robust exchange biased antiferromagnetic/ferromagnetic (AF/FM) bilayers with strong resilience to high temperatures. In this work, we studied the thermal stability of MnPt and MnIr by investigating the exchange bias effect in AF/CoFe bilayers and tunneling magnetoresistance (TMR) full stacks. In bilayers, the obtained blocking temperature ( T b ) of 380 °C for MnPt is higher than T b of 340 °C for MnIr, indicating a better thermal stability. Based on Malozemoff's model, we developed a comprehensive model to describe the exchange bias field ( H ex ) behavior at high temperature by considering the T b distribution and temperature dependence of FM magnetization, giving a good agreement with the experimental data. With increasing temperature, a coercivity ( H c ) enhancement peak was observed in MnIr bilayer, which shows a good agreement with T b distribution. This evidences the H c peak is dominated by the thermal activation of AF grains, indicating that the H c peak only appears at T b center , which is lower than overall T b . The structural properties and grain size of AF layers were studied by X-ray diffraction (XRD), where a mean grain size of 10.6 and 12.6 nm were obtained for MnPt and MnIr, respectively. Compared to bilayers, a more stable thermal behavior was observed in full stacks. In conclusions, our study compared the thermal stability of exchange bias coupling using MnPt and MnIr and developed a comprehensive model to study their temperature dependence. This proposed approach can be used for theoretical studies and experimental designs of AF-based materials for spintronic applications, such as magnetoresistive devices and high density memories. [ABSTRACT FROM AUTHOR]