Cite
Design and construction of Z-scheme Bi2S3/nitrogen-doped graphene quantum dots: Boosted photoelectric conversion efficiency for high-performance photoelectrochemical aptasensing of sulfadimethoxine.
MLA
You, Fuheng, et al. “Design and Construction of Z-Scheme Bi2S3/Nitrogen-Doped Graphene Quantum Dots: Boosted Photoelectric Conversion Efficiency for High-Performance Photoelectrochemical Aptasensing of Sulfadimethoxine.” Biosensors & Bioelectronics, vol. 130, Apr. 2019, pp. 230–35. EBSCOhost, https://doi.org/10.1016/j.bios.2019.01.058.
APA
You, F., Zhu, M., Ding, L., Xu, Y., & Wang, K. (2019). Design and construction of Z-scheme Bi2S3/nitrogen-doped graphene quantum dots: Boosted photoelectric conversion efficiency for high-performance photoelectrochemical aptasensing of sulfadimethoxine. Biosensors & Bioelectronics, 130, 230–235. https://doi.org/10.1016/j.bios.2019.01.058
Chicago
You, Fuheng, Mingyue Zhu, Lijun Ding, Yuhuan Xu, and Kun Wang. 2019. “Design and Construction of Z-Scheme Bi2S3/Nitrogen-Doped Graphene Quantum Dots: Boosted Photoelectric Conversion Efficiency for High-Performance Photoelectrochemical Aptasensing of Sulfadimethoxine.” Biosensors & Bioelectronics 130 (April): 230–35. doi:10.1016/j.bios.2019.01.058.