Cite
Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study.
MLA
Shi, Jianying, et al. “Tuning the Electronic Structure of GeC/WS2 van Der Waals Heterostructure by Electric Field and Strain: A First Principles Study.” Computational Materials Science, vol. 160, Apr. 2019, pp. 301–08. EBSCOhost, https://doi.org/10.1016/j.commatsci.2019.01.010.
APA
Shi, J., Ou, Y., Migliorato, M. A., Wang, H., Li, H., Zhang, Y., Gu, Y., & Zou, M. (2019). Tuning the electronic structure of GeC/WS2 van der Waals heterostructure by electric field and strain: A first principles study. Computational Materials Science, 160, 301–308. https://doi.org/10.1016/j.commatsci.2019.01.010
Chicago
Shi, Jianying, Yang Ou, Max A. Migliorato, Hongyu Wang, Hui Li, Yue Zhang, Yousong Gu, and Mingqiang Zou. 2019. “Tuning the Electronic Structure of GeC/WS2 van Der Waals Heterostructure by Electric Field and Strain: A First Principles Study.” Computational Materials Science 160 (April): 301–8. doi:10.1016/j.commatsci.2019.01.010.