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FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy.
- Source :
-
Semiconductors . Dec2018, Vol. 52 Issue 16, p2114-2116. 3p. - Publication Year :
- 2018
-
Abstract
- Abstract: Our study describes FIB technological aspects of preparing mask for GaN selective area epitaxy on Si3N4/GaN template. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 52
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 134940696
- Full Text :
- https://doi.org/10.1134/S1063782618160212