Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates.

Highlights • In-plane InSb nanostructures are grown using atomic hydrogen assisted MBE. • InSb selective area epitaxy with respect to a SiO 2 mask is achieved. • Long in-plane nanowires are obtained despite lattice mismatch for narrow apertures. • InSb nanowire MOSFET with 1 µm gate length are fabricated without any transfer. Abstract The selective molecular beam epitaxy of InSb inside nanoscale apertures realized in a SiO 2 mask deposited on a highly mismatched substrate is studied. The substrate of interest is GaAs on which a 6.1 Å material (InAs or AlGaSb) has been grown accommodating part of the mismatch with InSb. For sub-100 nm wide aperture, several micron long in-plane InSb nanowires can be obtained. Different ways for measuring the electrical properties of these in-plane nanostructures are proposed. A 1 µm long gate length MOSFET is fabricated on a semi-insulating AlGaSb pseudo-substrate without any transfer on a host substrate. [ABSTRACT FROM AUTHOR]