A WATT-level 2.3-GHz GaAs MESFET power amplifier with gap-coupled microstrip-line matching topology.

Authors :: Meng, C. C.
Wang, W.
Source :: Microwave & Optical Technology Letters. 6/5/2004, Vol. 41 Issue 5, p346-348. 3p. 1 Color Photograph, 1 Diagram, 3 Graphs.
Publication Year :: 2004
Abstract: A one-stage hybrid power amplifier integrated with gap-coupled microstrip lines for impedance matching is demonstrated in this work. The gap-coupled microstrip line amplifier module realized here can provide 15-dB power gain, 33.5-dBm output power, and 42% power-added efficiency (PAE) at 2.3 GHz. The demonstrated topology is suitable in monolithic IC technology, especially in the millimeter-wave frequency because the gap-coupled microstrip lines can be easily compacted into small size. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 346–348, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20137 [ABSTRACT FROM AUTHOR]

Subjects :: *METAL semiconductor field-effect transistors
*FIELD-effect transistors
*STRIP transmission lines
*IMPEDANCE matching
*POWER amplifiers
*ELECTRONIC amplifiers

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