Progress with GaN-based blue/green LEDs and bluish-purple semiconductor LDs.

High output InGaN single quantum well type blue and green light emitting diodes (LEDs) with an optical output of between 3 and 5 mW have been developed and commercialized. The differences in peak absorption energy and light emitting energy for the blue and green LEDs were 290 and 570 meV. These values indicate that the LED or laser emission is generated from a deep localized level in an InGaN well layer. An InGaN multiple quantum well laser diode was developed that oscillated continuously at room temperature for more than 300 hours. The preliminary characteristics are an output of 50 mW, an operating temperature of 100 °C, a characteristic temperature of 170 K, and an oscillation wavelength of 416 nm. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(5): 1–8, 1998 [ABSTRACT FROM AUTHOR]