Initial anomalous diffusion of boron atoms at low-temperature annealing.

Experiments on the transient enhanced diffusion (TED) of boron in superlattice silicon wafers, for the first time demonstrated the existence of the anomalous enhanced diffusion of boron at the very early stage of low-temperature annealing at locations situated deeper than the implantation damage zone. It was confirmed that this phenomenon is caused by free self-interstitial silicon atoms present in the implantation tail region. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(10): 59–64, 2001 [ABSTRACT FROM AUTHOR]