Exchange bias in defect-induced ferromagnetic SiC.

Highlights • The an unexpected antiferromagnetism is investigated by the exchange bias in the defect-induced ferromagnetic SiC. • A single domain model is used to investigate the exchange bias. • Thus, for the first time, this study shows that an antiferromagnetism can also be induced in SiC by defect. Abstract In this paper, the observation of exchange bias in defective ferromagnetic SiC is presented. Two typical features of exchange bias are clearly observed: the shift of magnetic hysteresis upon field cooling and the training effect. A core-shell morphology particle model is employed to quantitatively analyze the exchange bias field dependence on the cooling field. Based on the model, the calculated anisotropy constant is 2.5 × 105 erg/cm3. The training effect can be described by the Kolmogorov-Avrami model, which is used for the classical exchange bias system. The appearance of exchange bias is the signature of the existence of an interface between ferromagnetic and antiferromagnetic layers or cores/shells. [ABSTRACT FROM AUTHOR]