Cite
Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process.
MLA
Zhang, Lixiang, et al. “Analytical Prediction for Depth of Subsurface Damage in Silicon Wafer Due to Self-Rotating Grinding Process.” Current Applied Physics, vol. 19, no. 5, May 2019, pp. 570–81. EBSCOhost, https://doi.org/10.1016/j.cap.2019.02.015.
APA
Zhang, L., Chen, P., An, T., Dai, Y., & Qin, F. (2019). Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process. Current Applied Physics, 19(5), 570–581. https://doi.org/10.1016/j.cap.2019.02.015
Chicago
Zhang, Lixiang, Pei Chen, Tong An, Yanwei Dai, and Fei Qin. 2019. “Analytical Prediction for Depth of Subsurface Damage in Silicon Wafer Due to Self-Rotating Grinding Process.” Current Applied Physics 19 (5): 570–81. doi:10.1016/j.cap.2019.02.015.