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A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . Apr2019, Vol. 66 Issue 4, p1454-1464. 11p. - Publication Year :
- 2019
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Abstract
- Recently, several magnetic tunnel junction (MTJ)-based non-volatile ternary content-addressable memory (NV-TCAM) cells have been proposed to realize zero standby power. However, they still suffer from low reliability and high power consumption during search operations. To address these issues, we propose a novel MTJ-based NV-TCAM cell, which is composed of 15 transistors and 4 MTJs (15T-4MTJ). By utilizing the differential MTJs with complementary states and positive feedback of cross-coupled inverters for sensing, the proposed 15T-4MTJ NV-TCAM cell can significantly improve the search reliability. Moreover, owing to that there is no static current during search operations, only dynamic charging and discharging current, it can achieve ultra-low power consumption. In addition, by using only one transistor as the critical path between the match-line and GND, its switch delay can be shortened, thereby realizing high-speed search operations. Hybrid CMOS/MTJ simulation results of the 144-bit word circuit show that the proposed 15T-4MTJ NV-TCAM cell can obtain a smaller search error rate of 2.7%, a higher search speed of 0.17 ns, and a lower search energy of 0.17 fJ/bit/search in comparison with other MTJ-based NV-TCAM cells. On the other hand, its write energy of 1.589 pJ/bit is about $3.64\times $ smaller than that of the previously proposed 10T-4MTJ NV-TCAM cell. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 66
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 135443098
- Full Text :
- https://doi.org/10.1109/TCSI.2018.2885343