Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth.

Highlights • A high-resolution time-of-flight mass spectrometry system was employed. • In-situ monitoring of vapor phase reaction was demonstrated. • Decomposition of NH 3 in the simple reactor was measured. Abstract The decomposition of ammonia (NH 3) in nitrogen (N 2) ambient was studied under non-equilibrium conditions similar to those in a metal organic vapor phase epitaxy (MOVPE) reactor during the epitaxial growth of group-III nitrides. The gas phase was sampled at different positions and analyzed using a time-of-flight mass spectrometry system with a high resolution (better than 0.002 u). Our results expand earlier findings. Even at the high temperature of 1200 °C, only 26% of NH 3 decomposed in a clean metal-free reactor, whereas a higher ratio of NH 3 decomposition was realized in the presence of stainless steel. The activation energy in the clean reactor was calculated to be 0.965 ± 0.004 eV. These results demonstrate the capability of our setup and shed new light on the elucidation of the vapor phase growth mechanism of group III-nitrides by MOVPE. [ABSTRACT FROM AUTHOR]