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Laser-induced aluminium-assisted crystallization of Ge-rich SixGe1-x epitaxy on Si.
- Source :
-
Thin Solid Films . Jun2019, Vol. 679, p55-57. 3p. - Publication Year :
- 2019
-
Abstract
- Single crystalline Ge-rich Si x Ge 1-x epitaxially grown on a Si substrate is attracting great attention for its potential in optical and electronic device applications. One method of achieving Si x Ge 1-x epitaxy is by aluminium-assisted crystallization although the challenge of controlling the Si content in the Si x Ge 1-x is limited by the furnace annealing process. Herein, we report the use of a diode laser to induce aluminium-assisted crystallization of Si x Ge 1-x on Si with minimal Si content in the Si x Ge 1-x layer. By replacing furnace heat treatment with laser treatment, the reaction time is shortened from minutes to milliseconds which can limit the amount of Si incorporation into the Si x Ge 1-x films. X-ray diffraction, Raman spectroscopy, transmission electron microscopy and X-ray spectroscopy analyses are conducted on the fabricated films revealing the achievement of Ge-rich Si x Ge 1-x on Si through laser-induced aluminium-assisted crystallization. The higher laser dose may slightly increase the Si content and improve the crystallinity of the Si x Ge 1-x films. • First use of laser to induce aluminium-assisted crystallization of Si x Ge 1-x on Si • The laser-induced method reduces the reaction time from minutes to milliseconds • Achievement of Ge-rich Si x Ge 1-x on Si by this laser-induced method • Higher laser dose may improve the crystallinity of Si x Ge 1-x films [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 679
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 136088318
- Full Text :
- https://doi.org/10.1016/j.tsf.2019.04.005