Effect of Sintering Temperature on the Dielectric Properties of Non-stoichiometric Nickel Oxide.

Non-stoichiometric nickel oxide was synthesized by solid state route method at different sintering temperatures upto 1100 °C. The structure of synthesized compounds were analyzed by X ray diffraction analysis (XRD) and the dielectric constant was found to different for samples of different stoichiometry. These results were interpreted as the decomposition temperature increases, which heals the defects present in the non-stoichiometric nickel oxide and loss peak shifts to the higher frequency which is due to long range hopping of charge carriers. [ABSTRACT FROM AUTHOR]