Mid-wavelength infrared InAsSb/InAs nBn detectors and FPAs with very low dark current density.

There was a significant improvement in the performance of infrared nBn detectors utilizing InAs/InAsSb absorbers culminating in the development of infrared focal plane arrays (FPAs) with excellent operability (99.7%) and operating at temperature significantly higher than InSb FPAs. In this work, we demonstrated that these detectors can operate with very low dark current densities enabling their use in applications with a low-to-medium level of background illumination. We showed that single pixel photodetectors with a cut-off wavelength of 4.8 μm and a quantum efficiency of QEmax = 35% under backside-illumination have a dark current density of 1 × 10−10 A/cm2 at an operating bias of −0.1 V and temperature T = 100 K. Additionally, we compared the single pixel dark current results with measurements of the dark current in FPAs. The FPA showed excellent performance with an operability of 99.7% and was able to reach a mode dark current density of 5 × 10−11 A/cm2 at 80 K. [ABSTRACT FROM AUTHOR]