Cite
Influence of p- and n-type doping gases on nanoparticle formation in SiH4/H2 radiofrequency plasma discharges used for polymorphous silicon thin film deposition.
MLA
Kharchenko, A. V., et al. “Influence of P- and n-Type Doping Gases on Nanoparticle Formation in SiH4/H2 Radiofrequency Plasma Discharges Used for Polymorphous Silicon Thin Film Deposition.” Journal of Applied Physics, vol. 125, no. 16, Apr. 2019, p. N.PAG. EBSCOhost, https://doi.org/10.1063/1.5090769.
APA
Kharchenko, A. V., Ouaras, K., Suendo, V., Ebothé, J., & Roca i Cabarrocas, P. (2019). Influence of p- and n-type doping gases on nanoparticle formation in SiH4/H2 radiofrequency plasma discharges used for polymorphous silicon thin film deposition. Journal of Applied Physics, 125(16), N.PAG. https://doi.org/10.1063/1.5090769
Chicago
Kharchenko, A. V., K. Ouaras, V. Suendo, J. Ebothé, and P. Roca i Cabarrocas. 2019. “Influence of P- and n-Type Doping Gases on Nanoparticle Formation in SiH4/H2 Radiofrequency Plasma Discharges Used for Polymorphous Silicon Thin Film Deposition.” Journal of Applied Physics 125 (16): N.PAG. doi:10.1063/1.5090769.