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Phase transformation and dielectric properties of sputtering-prepared Zn–Ti–O thin films.
- Source :
-
Ceramics International . Jul2019, Vol. 45 Issue 10, p12814-12819. 6p. - Publication Year :
- 2019
-
Abstract
- Zn–Ti–O films were co-sputtered from Zn and Ti targets and then annealed at temperatures ranging from 600 °C to 900 °C for 2 h under an air atmosphere. The [Ti]/([Ti]+[Zn]) ratio decreased from 75.52 to 28.26 as the Zn-target power increased from 25 W to 75 W. The phase transition of the films strongly depended on the [Ti]/([Ti]+[Zn]) ratio. High [Ti]/([Ti]+[Zn]) ratios led to the coexistence of ZnTiO 3 , Zn 2 Ti 3 O 8 , and rutile TiO 2 phases. Zn 2 Ti 3 O 8 gradually became the major crystalline phase as the [Ti]/([Ti]+[Zn]) ratio and rutile TiO 2 and ZnTiO 3 phases decreased. The aforementioned phases disappeared when the [Ti]/([Ti]+[Zn]) ratio was especially low. In their place, Zn 2 TiO 4 and even ZnO phases developed. The dielectric constant of the films increased with increasing [Ti]/([Ti]+[Zn]) ratio. However, extremely high [Ti]/([Ti]+[Zn]) ratios increased the dielectric loss of the films. The film mainly composed of the Zn 2 Ti 3 O 8 phase exhibited optimal dielectric properties, including a dielectric constant and loss equal to 40.1 and 0.0304, respectively, at 1 MHz. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 45
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 136272694
- Full Text :
- https://doi.org/10.1016/j.ceramint.2019.03.201