Cite
A 500-V High ON-BV Parasitic JFET With an Optimized Drift Region.
MLA
Mao, Kun, et al. “A 500-V High ON-BV Parasitic JFET With an Optimized Drift Region.” IEEE Transactions on Electron Devices, vol. 66, no. 3, Mar. 2019, pp. 1396–401. EBSCOhost, https://doi.org/10.1109/TED.2019.2894957.
APA
Mao, K., Wang, H. S., Yao, Y., Nie, H., Chen, G., Zhou, J., Chen, Z., & Du, J. (2019). A 500-V High ON-BV Parasitic JFET With an Optimized Drift Region. IEEE Transactions on Electron Devices, 66(3), 1396–1401. https://doi.org/10.1109/TED.2019.2894957
Chicago
Mao, Kun, Hai Shi Wang, Yao Yao, Hai Nie, Gong Chen, Juan Zhou, Zhu Chen, and Jiang Du. 2019. “A 500-V High ON-BV Parasitic JFET With an Optimized Drift Region.” IEEE Transactions on Electron Devices 66 (3): 1396–1401. doi:10.1109/TED.2019.2894957.