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Gate-Lifted nMOS ESD Protection Device Triggered by a p-n-p in Series With a Diode.
- Source :
-
IEEE Transactions on Electron Devices . Apr2019, Vol. 66 Issue 4, p1642-1647. 6p. - Publication Year :
- 2019
-
Abstract
- We demonstrate a gate-lifted nMOS electrostatic discharge (ESD) protection device triggered by a p-n-p in series with a diode in a 0.18- $\mu \text{m}$ bulk CMOS technology for 5-V mobile applications up to 85 °C. This voltage-triggering scheme is suitable for fail-safe, open-drain, supply, and surge protections. In addition, the robust ESD performance is boosted by parasitic embedded-silicon-controlled-rectifier action in the high-current regime. No extra masks nor additional RC control circuitry are required for this implementation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 136509830
- Full Text :
- https://doi.org/10.1109/TED.2019.2899457