Back to Search
Start Over
Double-Gate TFET With Vertical Channel Sandwiched by Lightly Doped Si.
- Source :
-
IEEE Transactions on Electron Devices . Apr2019, Vol. 66 Issue 4, p1656-1661. 6p. - Publication Year :
- 2019
-
Abstract
- This paper examines a tunnel field-effect transistor (TFET) as a promising device for achieving steeper switching and better electrical performances in low-power operation. It features a double-gate TFET with vertical channel sandwiched by lightly doped Si (VS-TFET). The vertical tunnel junction is employed on the source side for the steeper subthreshold swing (SS) and for the higher ON-current (${I}_{ \mathrm{\scriptscriptstyle ON}}$) by restricting tunnel barrier width. The VS-TFET shows 17-mV/dec minimum SS and ${10}^{ {4}}~{ \mathrm{\scriptstyle ON}}/{ \mathrm{\scriptstyle OFF}}$ current ratio (${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$) for sub-0.7-V gate overdrive. In addition, the VS-TFET shows sub-60-mV/dec SS in a wide range of ${I}_{D}$ regardless of sweep directions. In conclusion, the work presented here demonstrates that the VS-TFET will be one of the most promising candidates for a next-generation low-power device. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 136509831
- Full Text :
- https://doi.org/10.1109/TED.2019.2899206