Cite
Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology.
MLA
Wu, Yi-Ting, et al. “Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology.” IEEE Transactions on Electron Devices, vol. 66, no. 4, Apr. 2019, pp. 1754–59. EBSCOhost, https://doi.org/10.1109/TED.2019.2900921.
APA
Wu, Y.-T., Ding, F., Connelly, D., Chiang, M.-H., Chen, J. F., & Liu, T.-J. K. (2019). Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology. IEEE Transactions on Electron Devices, 66(4), 1754–1759. https://doi.org/10.1109/TED.2019.2900921
Chicago
Wu, Yi-Ting, Fei Ding, Daniel Connelly, Meng-Hsueh Chiang, Jone F. Chen, and Tsu-Jae King Liu. 2019. “Simulation-Based Study of High-Density SRAM Voltage Scaling Enabled by Inserted-Oxide FinFET Technology.” IEEE Transactions on Electron Devices 66 (4): 1754–59. doi:10.1109/TED.2019.2900921.