Cite
Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer though TCAD simulation.
MLA
Xing Lu, et al. “Monolithic Integration of GaN LEDs with Vertical Driving MOSFETs by Selective Area Growth and Band Engineering of the P-AlGaN Electron Blocking Layer Though TCAD Simulation.” Semiconductor Science & Technology, vol. 34, no. 6, June 2019, p. 1. EBSCOhost, https://doi.org/10.1088/1361-6641/ab13e1.
APA
Xing Lu, Song Yang, Huaxing Jiang, & Jin Wu. (2019). Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer though TCAD simulation. Semiconductor Science & Technology, 34(6), 1. https://doi.org/10.1088/1361-6641/ab13e1
Chicago
Xing Lu, Song Yang, Huaxing Jiang, and Jin Wu. 2019. “Monolithic Integration of GaN LEDs with Vertical Driving MOSFETs by Selective Area Growth and Band Engineering of the P-AlGaN Electron Blocking Layer Though TCAD Simulation.” Semiconductor Science & Technology 34 (6): 1. doi:10.1088/1361-6641/ab13e1.