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Formation of conductive AlN buffer layer using spontaneous via-holes and realization of vertical AlGaN Schottky diode on a Si substrate.
- Source :
-
Journal of Applied Physics . 5/28/2019, Vol. 125 Issue 20, pN.PAG-N.PAG. 10p. 3 Color Photographs, 6 Diagrams, 4 Graphs. - Publication Year :
- 2019
-
Abstract
- A conductive AlN epitaxial layer is successfully realized by spontaneously forming via-holes filled with n-AlGaN inside an AlN buffer layer on a Si substrate. The via-holes are found to originate from the formation of an Al–Si alloy, produced from a small amount of Al supplied to the Si substrate at the initial stage of the crystal growth of the n-AlN buffer layer using metal organic chemical vapor deposition and successive selective growth of n-AlN on the Si surface. The via-holes are filled with conductive n-AlGaN by successive epitaxial growth of n-AlGaN, making the insulating n-AlN buffer layer conductive. The vertical conductivity through this n-AlN buffer layer is enhanced more than 540 times compared with an n-AlN buffer layer without via-holes. Using this conductive n-AlN buffer layer on the Si substrate, we successfully fabricated a vertical n-AlGaN Schottky diode on the Si substrate for the first time. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 125
- Issue :
- 20
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 136773008
- Full Text :
- https://doi.org/10.1063/1.5058110