Effects of SiO2 interlayers on the phase change behavior in the multilayer Zn15Sb85/SiO2 materials.

In this study, the multilayer Zn 15 Sb 85 /SiO 2 materials were investigated for phase change memory application with the intention of improving thermal stability and switching speed. The Zn 15 Sb 85 /SiO 2 materials exhibited a high crystallization temperature (T c ∼230 °C), good data retention (T 10 ∼ 160 °C), small density change (∼3.3%), flat surface and rapid amorphization speed (∼1.34 ns). T-shaped phase change devices based on Zn 15 Sb 85 /SiO 2 materials achieved low RESET voltage (V RESET ∼ 1.3 V) in programming operation. The results showed that the multilayer Zn 15 Sb 85 /SiO 2 material was a promising phase change material with high thermal ability, low power consumption and rapid switching speed. • The films were prepared by alternate sputtering Zn 15 Sb 85 and SiO 2 materials. • The fast phase change speed and good thermal stability were achieved. • The adding of SiO 2 interlayers restrained the crystallization. • The SiO 2 interlayers made the thin film more compact. • The PCM devices based on Zn 15 Sb 85 /SiO 2 had a lower power consumption. [ABSTRACT FROM AUTHOR]