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Noble metal dopants modified two-dimensional zinc oxide: Electronic structures and magnetic properties.

Authors :
Chen, Lanli
Zhang, Xiaofei
Xiong, Zhihua
Liu, Yuchen
Cui, Yuanyuan
Liu, Bin
Source :
Journal of Alloys & Compounds. Aug2019, Vol. 798, p149-157. 9p.
Publication Year :
2019

Abstract

Two-dimensional materials have attracted great attentions due to their novel properties and promising applications in opto-electronic and spintronics devices, but the advance on engineering suitable band gap and ferromagnetic behaviour is still undergoing. Here, the electronic structures and magnetic properties of NM -doped (NM =Pd, Pt, Ag, Au, Cu) ZnO monolayer are investigated using first-principles calculations. The results show that the formation of NM -doped ZnO monolayer is easier under the O-rich condition than under the Zn-rich condition. Furthermore, the band gap of the ZnO monolayer becomes narrowed after NM doping. Moreover, all NM -dopants induce the polarization of the ZnO monolayer, and the total magnetic moments are within 0.8–2.0 μ B. The origin is attributed to the spin states of NM - d xy , NM - d x 2 -y 2 and p y , p x of their neighboring O atoms. In addition, we found that the Ag-, Au-, and Cu-doped ZnO monolayers are ferromagnetic half-metals, while Pd- and Pt-doping cases are ferromagnetic semiconductors. The present results demonstrate that NM -doping is a proper way to tailor the electronic and magnetic properties of the ZnO monolayer so as to expand its utilization in nanoelectronics and spintronics. Image 1 • Noble metal-doped 2D-ZnO is most likely to form in O-rich environments. • Noble metal-doped can result in the enhance magnetism and the narrowed band gap. • The magnetic moment comes from the noble metals and their neighboring O atoms. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
798
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
137013448
Full Text :
https://doi.org/10.1016/j.jallcom.2019.05.257