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Pulse Switching Characteristics of MAGTs for Pulsed Power Applications.
- Source :
-
Electrical Engineering in Japan . 8/1/1994, Vol. 114 Issue 5, p108-118. 11p. - Publication Year :
- 1994
-
Abstract
- For pulsed power systems such as lasers and accelerators, semiconductor switches with their longer service life have actively been developed as replacements for thyratrons. The MOS-driven thyristors are suitable for pulsed power applications because they have high-power handling and fast turn-on capabilities. The MOS-assisted gate-triggered thyristor (MAGT), designed especially for pulsed power, is a promising candidate in this field. This paper presents the results of an investigation into the performance of MAGTs. Using a pulse-forming network (PEN), the pulse-switching characteristics and the dynamic resistance characteristics during the current flow are investigated. A maximum current density of 21.8 kA/cm² and di/dt of 106 kA/μs/cm² with 1550-V anode voltage on a single-shot basis were obtained. Furthermore, a life test with 109 shots at a high repetition rate showed no degradation in the observed characteristics. Based on these experimental results, a carrier flow model of MAGT during turn-on process is proposed and the turn-on mechanism is considered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 04247760
- Volume :
- 114
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Electrical Engineering in Japan
- Publication Type :
- Academic Journal
- Accession number :
- 13714095
- Full Text :
- https://doi.org/10.1002/eej.4391140513