Cite
Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor.
MLA
Yang, Chang-Feng, et al. “Gate Oxide Local Thinning Mechanism-Induced Sub-60 MV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor.” IEEE Transactions on Electron Devices, vol. 66, no. 1, Jan. 2019, pp. 279–85. EBSCOhost, https://doi.org/10.1109/TED.2018.2879654.
APA
Yang, C.-F., Chen, B.-J., Chen, W.-C., Lin, K.-W., & Hwu, J.-G. (2019). Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor. IEEE Transactions on Electron Devices, 66(1), 279–285. https://doi.org/10.1109/TED.2018.2879654
Chicago
Yang, Chang-Feng, Bo-Jyun Chen, Wei-Chen Chen, Kuan-Wun Lin, and Jenn-Gwo Hwu. 2019. “Gate Oxide Local Thinning Mechanism-Induced Sub-60 MV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor.” IEEE Transactions on Electron Devices 66 (1): 279–85. doi:10.1109/TED.2018.2879654.