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Statistical MOSFET Modeling Methodology for Cryogenic Conditions.
- Source :
-
IEEE Transactions on Electron Devices . Jan2019, Vol. 66 Issue 1, p66-72. 7p. - Publication Year :
- 2019
-
Abstract
- Conventional transistor models are unable to capture the electrical behavior of transistors at cryogenic temperatures. In this paper, a methodology has been developed to calibrate temperature dependence parameters of Berkeley Short-Channel Insulated Gate Field Effect Transistor Model (BSIM3). Rather than modifying BSIM3 equations, the algorithm only changes the values of relevant parameters through noniterative, analytic operations; therefore, it can be implemented in typical circuit simulation tools. Proposed methodology allows to estimate ${I}_{D}$ – ${V}_{\textsf {GS}}$ and ${I}_{D}$ – ${V}_{\textsf {DS}}$ curves of the transistors having different channel lengths and widths even under various operating voltages, including the body bias. The parameter extraction algorithm runs with a reasonable computation cost and can compute parameter sets for transistors at user-defined cryogenic conditions. [ABSTRACT FROM AUTHOR]
- Subjects :
- *FIELD-effect transistors
*STATISTICAL models
*TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137215174
- Full Text :
- https://doi.org/10.1109/TED.2018.2877942