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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Jan2019, Vol. 66 Issue 1, p372-377. 6p. - Publication Year :
- 2019
-
Abstract
- Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm−2, the dynamic ON-resistance is almost completely suppressed at 600 V and $T$ = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137215178
- Full Text :
- https://doi.org/10.1109/TED.2018.2881325