TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device.

MLA

Ma, Jigang, et al. “TDDB Mechanism in A-Si/TiO2 Nonfilamentary RRAM Device.” IEEE Transactions on Electron Devices, vol. 66, no. 1, Jan. 2019, pp. 777–84. EBSCOhost, https://doi.org/10.1109/TED.2018.2881294.

APA

Ma, J., Chai, Z., Zhang, W. D., Zhang, J. F., Marsland, J., Govoreanu, B., Degraeve, R., Goux, L., & Kar, G. S. (2019). TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device. IEEE Transactions on Electron Devices, 66(1), 777–784. https://doi.org/10.1109/TED.2018.2881294

Chicago

Ma, Jigang, Zheng Chai, Wei Dong Zhang, Jian Fu Zhang, John Marsland, Bogdan Govoreanu, Robin Degraeve, Ludovic Goux, and Gouri Sankar Kar. 2019. “TDDB Mechanism in A-Si/TiO2 Nonfilamentary RRAM Device.” IEEE Transactions on Electron Devices 66 (1): 777–84. doi:10.1109/TED.2018.2881294.