Cite
A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths.
MLA
Kong, Moufu, et al. “A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths.” IEEE Transactions on Electron Devices, vol. 66, no. 1, Jan. 2019, pp. 592–97. EBSCOhost, https://doi.org/10.1109/TED.2018.2882016.
APA
Kong, M., Yi, B., & Zhang, B. (2019). A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths. IEEE Transactions on Electron Devices, 66(1), 592–597. https://doi.org/10.1109/TED.2018.2882016
Chicago
Kong, Moufu, Bo Yi, and Bingke Zhang. 2019. “A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths.” IEEE Transactions on Electron Devices 66 (1): 592–97. doi:10.1109/TED.2018.2882016.