Cite
Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs.
MLA
Jia, Yonghao, et al. “Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices, vol. 66, no. 1, Jan. 2019, pp. 357–63. EBSCOhost, https://doi.org/10.1109/TED.2018.2881255.
APA
Jia, Y., Xu, Y., Wen, Z., Wu, Y., & Guo, Y. (2019). Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 66(1), 357–363. https://doi.org/10.1109/TED.2018.2881255
Chicago
Jia, Yonghao, Yuehang Xu, Zhang Wen, Yunqiu Wu, and Yongxin Guo. 2019. “Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs.” IEEE Transactions on Electron Devices 66 (1): 357–63. doi:10.1109/TED.2018.2881255.