Cite
Transadmittance Efficiency Under NQS Operation in Asymmetric Double Gate FDSOI MOSFET.
MLA
El Ghouli, Salim, et al. “Transadmittance Efficiency Under NQS Operation in Asymmetric Double Gate FDSOI MOSFET.” IEEE Transactions on Electron Devices, vol. 66, no. 1, Jan. 2019, pp. 300–07. EBSCOhost, https://doi.org/10.1109/TED.2018.2882539.
APA
El Ghouli, S., Sallese, J.-M., Juge, A., Scheer, P., & Lallement, C. (2019). Transadmittance Efficiency Under NQS Operation in Asymmetric Double Gate FDSOI MOSFET. IEEE Transactions on Electron Devices, 66(1), 300–307. https://doi.org/10.1109/TED.2018.2882539
Chicago
El Ghouli, Salim, Jean-Michel Sallese, Andre Juge, Patrick Scheer, and Christophe Lallement. 2019. “Transadmittance Efficiency Under NQS Operation in Asymmetric Double Gate FDSOI MOSFET.” IEEE Transactions on Electron Devices 66 (1): 300–307. doi:10.1109/TED.2018.2882539.