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Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier.
- Source :
-
IEEE Transactions on Electron Devices . Jan2019, Vol. 66 Issue 1, p364-371. 8p. - Publication Year :
- 2019
-
Abstract
- The impact of varying the GaN channel layer thickness (${t}_{\text {ch}}$) in InAlGaN/AlN/GaN HEMTs with C-doped AlGaN back barriers is investigated. ${t}_{\text {ch}}$ was 50, 100, and 150 nm, and the gate length of the fabricated HEMTs ranged from 50 to 200 nm. It is found that short-channel effects (SCEs) are significantly mitigated with a small ${t}_{\text {ch}}$. For HEMTs with a gate length of 50 nm, the drain-induced barrier lowering changes from 40 to 93 mV/V as ${t}_{\text {ch}}$ is increased from 50 to 150 nm. On the other hand, it is shown that dispersive effects are more severe for a smaller ${t}_{\text {ch}}$ , as demonstrated by a sixfold increase in the dynamic ON-resistance for ${t}_{\text {ch}} = 50$ nm compared to ${t}_{\text {ch}} = 150$ nm. The tradeoff between dispersion and SCEs is reflected in large-signal measurements at 30 GHz. The 50-nm channel, mainly limited by dispersion, exhibits an output power of 3.5 W/mm. The thicker channels reach a maximum of around 5 W/mm, but for different gate lengths due to the difference in severity of the SCEs. This paper elucidates the interplay between SCEs and dispersion related to ${t}_{\text {ch}}$ , its consequences for the large-signal performance and for the limitation in downscaling of the gate length. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137215208
- Full Text :
- https://doi.org/10.1109/TED.2018.2881319