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A Simulation Study of a Novel Superjunction MOSFET Embedded With an Ultrasoft Reverse-Recovery Body Diode.
- Source :
-
IEEE Transactions on Electron Devices . May2019, Vol. 66 Issue 5, p2333-2338. 6p. - Publication Year :
- 2019
-
Abstract
- In this paper, a novel superjunction (SJ) MOSFET embedded with an ultrasoft reverse-recovery body diode is proposed and studied by simulation. The device has a composite assistant layer, which consists of a highly doped n-buffer region and an extended p-pillar region, under the SJ layer. The assistant layer provides residual carriers during the reverse-recovery procedure and smoothens the current. Simulated results show that the soft factor is upgraded from 0.04 to over 0.3 when the depth of the assistant layer increases from $0~\mu \text{m}$ to that of the SJ layer. The increment of the specific ON-resistance is less than 10% if the concentration of the n-buffer region is 25 fold that of the n-pillar region. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137234339
- Full Text :
- https://doi.org/10.1109/TED.2019.2904252