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Investigation of Bandgap Engineering of Gallium Zinc Oxide-Based Ultraviolet Photodetector by Mist Atmospheric Pressure Chemical Vapor Deposition.
- Source :
-
IEEE Transactions on Electron Devices . May2019, Vol. 66 Issue 5, p2256-2262. 7p. - Publication Year :
- 2019
-
Abstract
- This paper presents the GaxZn1−xO (x = 0, 0.1, and 0.3)-based photodetectors (PDs) by using mist atmospheric pressure chemical vapor deposition. X-ray diffraction and X-ray photoelectron spectroscopy are used to characterize crystal orientation, chemical qualitative, and quantitative characteristics of the GaxZn1−x (x = 0, 0.1, and 0.3) thin films. The photoluminescence is used to observe the near-band-edge emission and trap energy level. Among these three PDs, the Ga0.3Zn0.7O-based PD shows the lowest dark current, smallest noise current, and shortest response time. Furthermore, the Ga0.3Zn0.7O-based PD exhibits higher UV-B to UV-A rejection ratio and higher UV-B to visible rejection ratio. It is found that the cutoff wavelength is tunable by changing Ga contents in GaxZn1−x thin films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137234340
- Full Text :
- https://doi.org/10.1109/TED.2019.2904986