Cite
An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss.
MLA
Tian, Kai, et al. “An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss.” IEEE Transactions on Electron Devices, vol. 66, no. 5, May 2019, pp. 2307–13. EBSCOhost, https://doi.org/10.1109/TED.2019.2905636.
APA
Tian, K., Hallen, A., Qi, J., Ma, S., Fei, X., Zhang, A., & Liu, W. (2019). An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss. IEEE Transactions on Electron Devices, 66(5), 2307–2313. https://doi.org/10.1109/TED.2019.2905636
Chicago
Tian, Kai, Anders Hallen, Jinwei Qi, Shenhui Ma, Xinxing Fei, Anping Zhang, and Weihua Liu. 2019. “An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss.” IEEE Transactions on Electron Devices 66 (5): 2307–13. doi:10.1109/TED.2019.2905636.